Semiconductor apparatus including insulating layer having a protrusive portion
US6822317B1 · kind B1 · utility
17Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2000 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Mar 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus comprising a semiconductor device, an electrically insulating layer formed on the semiconductor device, and an external connection terminal formed on the electrically insulating layer and electrically connected to an electrode of the semiconductor device, wherein a power/ground line and a signal line in a region of from an edge of the electrically insulating layer to a uniform-thickness flat portion of the electrically insulating layer are different in kind of wiring pattern from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.