Robust Group III light emitting diode for high reliability in standard packaging applications

US6825501B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• John Edmond · Durham, US
• Brian Thibeault · Lompoc, US
• David B. Slater, Jr. · Durham, US
• Gerald H. Negley · Durham, US
• Van Mieczkowski · Apex, US

Key dates

• Filing date: May 14, 2002
• Grant date: Nov 30, 2004
• Expiry date: May 14, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity condition. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contract layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.