Patent · US Expired

Random access semiconductor memory with reduced signal overcoupling

US6826075B2 · kind B2 · utility

0Cited by

8References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Dietmar Gogl · South Burlington, US
Thomas Rohr · Aschheim, DE
Heinz Honigschmid · Starnberg, DE

Key dates

Filing date	Jul 13, 2001
Grant date	Nov 30, 2004
Priority date	—
Expiry date	Jul 13, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10B61/00
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory matrix has at least one cell array including column lines and row lines. Memory elements are situated at points where the row lines and column lines intersect one another. In each case two adjacent lines are guided such that they cross one another in such a way that the two lines change their spatial configurations in sections along the direction in which they run. Thus an overcoupling of signals between the lines is minimized.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.