Method of manufacturing a trench transistor having a heavy body region
US6828195B2 · kind B2 · utility
32Cited by
82References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2003 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Jan 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.