Izak Bencuya
33Patents
18h-index
14Co-inventors
78Inventor score
Filing activity: Feb 24, 1984 → May 15, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6429481B1 | Field effect transistor and method of its manufacture | Electricity | 366 | Expired |
| US5567634A | Method of fabricating self-aligned contact trench DMOS transistors | Electricity | 163 | Expired |
| US5430324A | High voltage transistor having edge termination utilizing trench technology | Electricity | 144 | Expired |
| US5605852A | Method for fabricating high voltage transistor having trenched termination | Electricity | 129 | Expired |
| US5665619A | Method of fabricating a self-aligned contact trench DMOS transistor structure | Electricity | 114 | Expired |
| US5879994A | Self-aligned method of fabricating terrace gate DMOS transistor | Emerging Cross-Sectional Technologies | 83 | Expired |
| US5136349A | Closed cell transistor with built-in voltage clamp | Electricity | 54 | Expired |
| US5602046A | Integrated zener diode protection structures and fabrication methods for DMOS power devices | Emerging Cross-Sectional Technologies | 52 | Expired |
| US6423623B1 | Low Resistance package for semiconductor devices | Electricity | 41 | Expired |
| US4651407A | Method of fabricating a junction field effect transistor utilizing epitaxial overgrowth and vertical junction formation | Emerging Cross-Sectional Technologies | 40 | Expired |
| US6710406B2 | Field effect transistor and method of its manufacture | Electricity | 39 | Expired |
| US4566172A | Method of fabricating a static induction type recessed junction field effect transistor | Electricity | 33 | Expired |
| US6696726B1 | Vertical MOSFET with ultra-low resistance and low gate charge | Electricity | 32 | Expired |
| US6828195B2 | Method of manufacturing a trench transistor having a heavy body region | Electricity | 32 | Expired |
| US5767550A | Integrated zener diode overvoltage protection structures in power DMOS device applications | Emerging Cross-Sectional Technologies | 31 | Expired |
| US4543706A | Fabrication of junction field effect transistor with filled grooves | Electricity | 27 | Expired |
| US4779123A | Insulated gate transistor array | Electricity | 20 | Expired |
| US4551909A | Method of fabricating junction field effect transistors | Electricity | 18 | Expired |
| US7511339B2 | Field effect transistor and method of its manufacture | Electricity | 18 | Expired |
| US7148111B2 | Method of manufacturing a trench transistor having a heavy body region | Electricity | 17 | Expired |
| US4611384A | Method of making junction field effect transistor of static induction type | Emerging Cross-Sectional Technologies | 15 | Expired |
| US4751556A | Junction field effect transistor | Electricity | 14 | Expired |
| US7745289B2 | Method of forming a FET having ultra-low on-resistance and low gate charge | Electricity | 10 | Active |
| US8476133B2 | Method of manufacture and structure for a trench transistor having a heavy body region | Electricity | 5 | Active |
| US8101484B2 | Method of forming a FET having ultra-low on-resistance and low gate charge | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.