Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
US6828554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2004 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Feb 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of detecting a defect includes of determining an image acquisition condition for irradiating a converged electron beam onto a specimen and detecting a secondary electron emanated from the specimen, acquiring an image by detecting the secondary electron emanated from the specimen in synchronism with the irradiation of the electron beam, processing the acquired image to detect a defect on the specimen, and outputting information regarding the detected defect. The image acquisition condition is determined based on plural images which are acquired by changing at least one of acceleration condition of the secondary electron and an electrical field in the vicinity of the specimen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.