High-voltage semiconductor component

US6828609B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gerald Deboy · Klagenfurt, AT
• Dirk Ahlers · Hersbruck, DE
• Helmut Strack · Hersbruck, DE
• Michael Rueb · Faak am See, AT
• Hans Weber · Villach, AT

Key dates

• Filing date: Jun 6, 2003
• Grant date: Dec 7, 2004
• Expiry date: Jun 6, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.