Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture therefor
US6828649B2 · kind B2 · utility
2Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 7, 2002 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | May 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. In one advantageous embodiment, the semiconductor device includes a doped layer located over a semiconductor substrate, and an isolation trench located in the doped layer and having a dielectric layer located on a sidewall thereof. The semiconductor device may further include a conductive material located within the isolation trench and an interconnect that electrically connects the conductive material and the doped layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.