Gate dielectric quality for replacement metal gate transistors
US6830998B1 · kind B1 · utility
62Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Jun 17, 2003 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Jun 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gate dielectric degradation due to plasma damage during replacement metal gate processing is cured and prevented from further plasma degradation by treatment of the gate dielectric after removing the polysilicon gate. Embodiments include low temperature vacuum annealing after metal deposition and CMP, annealing in oxygen and argon, ozone or a forming gas before metal deposition, or heat soaking in silane or disilane, before metal deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.