Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same

US6831339B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Nestor A. Bojarczuk · Poughkeepsie, US
• Eduard A. Cartier · New York, US
• Supratik Guha · Croton-on-Hudson, US
• Lars-Ake Ragnarsson · New York, US

Key dates

• Filing date: Jan 8, 2001
• Grant date: Dec 14, 2004
• Expiry date: Jan 8, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28194
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A structure (e.g., field effect transistor) and a method for making the structure, include a substrate having a source region, a drain region, and a channel region therebetween, an insulating layer disposed over the channel region, the insulating layer including a layer including aluminum nitride disposed over the channel region, and a gate electrode disposed over the insulating layer.