Trench power semiconductor

US6833584B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Henninger · Birkenfeld, DE
• Franz Hirler · Isen, DE
• Manfred Kotek · Villach, AT
• Joost Larik · Poing, DE
• Markus Zundel · Egmating, DE

Key dates

• Filing date: Jun 10, 2002
• Grant date: Dec 21, 2004
• Expiry date: Jun 10, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

A trench power semiconductor component is described which has an edge cell in which an edge trench is provided. The edge trench, at least on an outer side wall, has a thicker insulating layer than an insulating layer of trenches of the cell array. This simple configuration provides a high dielectric strength and is economical to produce.