Patent · US Expired

Hybrid phase-shift mask

US6835510B2 · kind B2 · utility

7Cited by
32References
33Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 16, 2003
Grant dateDec 28, 2004
Priority date
Expiry dateSep 16, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/34
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method of forming a hybrid mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of forming at least one non-critical feature on the mask utilizing one of a low-transmission phase-shift mask (pattern) and a non-phase shifting mask (pattern), and forming at least one critical feature on the mask utilizing a high-transmission phase-shift mask (pattern).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.