Method of film deposition using activated precursor gases
US6838125B2 · kind B2 · utility
109Cited by
202References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2002 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Jan 19, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/452
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.