High concentration indium fluorine retrograde wells
US6838329B2 · kind B2 · utility
4Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2003 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Mar 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus to form a high-concentration, indium-fluorine retrograde well within a substrate. The indium-fluorine retrograde well includes an indium concentration greater than about 3E18/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.