Semiconductor component with enhanced avalanche ruggedness

US6838729B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Andreas Schlögl · Ottobrunn, DE
• Markus Schmitt · Neubiberg, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Markus Vossebürger · Birkenfeld, DE
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Apr 29, 2002
• Grant date: Jan 4, 2005
• Expiry date: Apr 29, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/261
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a semiconductor component with enhanced avalanche ruggedness. At the nominal current of this semiconductor component, in the event of an avalanche the voltage applied between two electrodes is 6 % or more above the static reverse voltage at the same temperature.