Method and apparatus for producing uniform processing rates
US6842147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2002 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Sep 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.