Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry
US6844255B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2001 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Oct 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention comprises methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry. In one implementation, a method of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry includes forming a conductive metal interconnect layer over a substrate. An insulating dielectric mass is provided about the conductive metal interconnect layer. The insulating dielectric mass has a first dielectric constant. At least a majority of the insulating dielectric mass is etched away from the substrate. After the etching, an interlevel dielectric layer is deposited to replace at least some of the etched insulating dielectric material. The interlevel dielectric layer has a second dielectric constant which is less than the first dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.