Precleaning method of precleaning a silicon nitride film forming system
US6844273B2 · kind B2 · utility
8Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2002 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Feb 6, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.