Method of forming lattice-matched structure on silicon and structure formed thereby

US6852575B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Nestor A. Bojarczuk · Poughkeepsie, US
• Douglas A. Buchanan · Somers, US
• Supratik Guha · Croton-on-Hudson, US
• Vijay Narayanan · New York, US
• Lars-Ake Ragnarsson · New York, US

Key dates

• Filing date: Jul 5, 2001
• Grant date: Feb 8, 2005
• Expiry date: Jul 5, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02293
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.