Nitrogen-free antireflective coating for use with photolithographic patterning
US6853043B2 · kind B2 · utility
21Cited by
11References
32Claims
0Family size
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Key dates
| Filing date | Nov 4, 2002 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Nov 4, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2217/282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiwOxHy:Cz, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.