Heat treatment for edges of multilayer semiconductor wafers
US6853802B2 · kind B2 · utility
12Cited by
10References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2003 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Nov 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for heat treating a multilayer semiconductor wafer having a central region and a peripheral edge each having a surface. The method includes thermally treating selected portions of the peripheral edge to compensate for local differences in heat absorption. This establishes a substantially equivalent temperature over both the surface of the central region and the surface of the peripheral edge to prevent the appearance of slip lines on those surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.