Process and device for the abrasive machining of surfaces, in particular semiconductor wafers

US6858449B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Mark Hollatz · Neustadt, DE
• Andreas Roemer · Dresden, DE

Key dates

• Filing date: Jun 26, 2002
• Grant date: Feb 22, 2005
• Expiry date: Oct 16, 2022

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B24B37/042
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

A process for abrasive machining of surfaces of semiconductor wafers, in particular during the production of electronic memory elements, is described. In the process, a topography of the surfaces of a plurality of wafers is planarized by an at least partially mechanical route. In a further process step which takes place at a later stage, further material is removed from the planarization surfaces by the action of a liquid, chemical composition (etchback). After the planarization step and before the etchback step, a layer thickness measurement of the planarized layer is carried. The method is distinguished by the fact that the measurement results of the layer thickness measurement are used as the basis for the automatic selection or formulation of one of a plurality of chemical compositions and/or the time of action of a selected or formulated chemical composition for carrying out the etchback step.