Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling

US6858532B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Wesley C. Natzle · New Paltz, US
• David C. Ahlgren · Wappingers Falls, US
• Steven G. Barbee · Beekman, US
• Marc W. Cantell · Enosburg Falls, US
• Basanth Jagannathan · Beacon, US
• Louis D. Lanzerotti · Burlington, US
• Seshadri Subbanna · Brewster, US
• Ryan Wuthrich · Burlington, US

Key dates

• Filing date: Dec 10, 2002
• Grant date: Feb 22, 2005
• Expiry date: May 23, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An oxide etch process is described which may be used for emitter and base preparation in bipolar SiGe devices. The low temperature process employed produces electrical insulation between the emitter and base by a COR etch which preserves insulating TEOS glass. The insulating TEOS glass provides reduced capacitance and helps to achieve high speed. An apparatus is also described for practicing the disclosed process.