Methods of fabricating integrated circuit gates by pretreating prior to oxidizing
US6864132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2003 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Mar 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit gates are fabricated by forming an insulated gate on an integrated circuit substrate, wherein the insulated gate includes a gate oxide on the integrated circuit substrate, a polysilicon pattern including polysilicon sidewalls, on the gate oxide, and a metal pattern on the polysilicon pattern. The insulated gate is pretreated with hydrogen and nitrogen gasses. The polysilicon sidewalls are then oxidized. The pretreating in hydrogen and nitrogen gasses prior to oxidizing can reduce growth in thickness of the gate oxide during the oxidizing and/or can reduce formation of whiskers on the metal pattern, compared to absence of the pretreatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.