Fabrication of dual work-function metal gate structure for complementary field effect transistors
US6864163B1 · kind B1 · utility
22Cited by
4References
22Claims
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Assignee
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Key dates
| Filing date | Oct 30, 2002 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Jul 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For fabricating dual gate structures of complementary field effect transistors, a gate material is deposited into an opening disposed over a P-well and an N-well having the complementary field effect transistors formed therein. A portion of the gate material disposed over one of the P-well or the N-well is modified to form a first gate structure, and the remaining gate material over the other one of the P-well or the N-well forms a second gate structure. The first and second gate structures form the dual gate structures of the complementary field effect transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.