Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications

US6869838B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Kam S. Law · San Jose, US
• Quanyuan Shang · Saratoga, US
• William Harshbarger · San Jose, US
• Dan Maydan · Los Altos Hills, US

Key dates

• Filing date: Apr 9, 2002
• Grant date: Mar 22, 2005
• Expiry date: Jan 8, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A method of passivation layer deposition using a cyclical deposition process is described. The cyclical deposition process may comprise alternately adsorbing a silicon-containing precursor and a reactant gas on a substrate structure. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a silicon-containing passivation layer, may be formed using such cyclical deposition techniques.