Triple sample sensing for magnetic random access memory (MRAM) with series diodes
US6873544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2003 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Oct 30, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0057
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data storage device that includes an array of resistive memory cells. The resistive memory cells may include a magnetic tunnel junction (MTJ) and a thin-film diode. The device may include a circuit that is electrically connected to the array and that is also capable of monitoring a signal current flowing through a selected memory cell. Once the signal current has been monitored, the circuit is capable of comparing the signal current to an average reference current in order to determine which of a first resistance state and a second resistance state the selected memory cell is in. Also, a method for operating the data storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.