Multistep cure technique for spin-on-glass films

US6878644B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Zhenjiang Cui · San Jose, US
• Rick J. Roberts · San Jose, US
• Michael S. Cox · Gilroy, US
• Jun Zhao · Mianyang, CN
• Khaled A. Elsheref · San Jose, US
• Alexandros T. Demos · Fremont, US

Key dates

• Filing date: May 6, 2003
• Grant date: Apr 12, 2005
• Expiry date: May 13, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3105
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.