Methods of forming deuterated silicon nitride-containing materials
US6881636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2003 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Jul 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes methods of forming deuterated silicon nitride-containing materials from at least one deuterated nitrogen compound in combination with one or more silicon-containing compounds that do not contain hydrogen isotopes. Suitable deuterated nitrogen compounds can comprise, for example, NH2D, NHD2 and ND3. Suitable silicon-containing compounds include, for example, SiCl4 and Si2Cl6. Deuterated silicon nitride-containing materials of the present invention can be incorporated into, for example, transistor devices. The transistor devices can be utilized in DRAM cells, which in turn can be utilized in electronic systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.