Methods and apparatus for providing an antifuse function
US6882027B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 28, 2003 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Aug 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for providing an antifuse are disclosed, where the antifuse includes a semiconductor substrate having an active area circumscribed by a shallow trench isolation (STI) boundary; a gate conductor disposed above the semiconductor substrate and overlying at least a portion of the STI boundary; a dielectric disposed between the semiconductor substrate and the gate conductor; a first terminal coupled to the gate conductor; and a second terminal coupled to the semiconductor substrate, wherein a breakdown of the dielectric causes electrical connections between regions of the gate conductor and regions of the active area including substantially near the STI boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.