Method for depositing a coating having a relatively high dielectric constant onto a substrate

US6884719B2 · kind B2 · utility

Assignees

• Mattson Technology, Inc. · US
• The Regents of the University of California · US

Inventors

• Jane Chang · Cambridge, US
• You-Sheng Lin · Los Angeles, US
• Avishai Kepten · Jerusalem, IL
• Michael Sendler · Migdal HaEmek, IL
• Sagy Levy · Jerusalem, IL
• Robin Bloom · Petaluma, US

Key dates

• Filing date: Mar 19, 2002
• Grant date: Apr 26, 2005
• Expiry date: Mar 19, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02192
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.