Minimally spaced MRAM structures
US6885051B2 · kind B2 · utility
0Cited by
19References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2004 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Apr 14, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.