In-situ film thickness measurement using spectral interference at grazing incidence
US6888639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2001 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Jan 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and system using spectral interference of light from plasma emissions collected at near grazing incidence to in-situ monitor and control the film thickness of a non-opaque film. Embodiments of this invention are particularly useful to all substrate processing chambers equipped to form an in-situ plasma within the chamber and which are used to deposit or etch non-opaque films. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to deposit a non-opaque film on a wafer substrate within the chamber. During the plasma deposition process, a plurality of wavelengths of radiation including those reflected from the top and bottom layer of the film being deposited upon a wafer surface are collected through an existing viewport, and conveyed to a spectrometer for measurements via an optical fiber attached near this viewport. These measurements are analyzed to determine the film's thickness. An alternate embodiment of the method of the present invention uses an interference filter to confine the spectral composition of the plasma emissions to an emission at a narrow wavelength interval and a photodiode to detect the intensity of t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.