Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US6888750B2 · kind B2 · utility
318Cited by
153References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2001 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Apr 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory array is provided. The array includes an array of nonvolatile memory devices, at least one driver circuit, and a substrate. The at least one driver circuit is not located in a bulk monocrystalline silicon substrate. The at least one driver circuit may be located in a silicon on insulator substrate or in a compound semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.