Mark G. Johnson
68Patents
32h-index
43Co-inventors
88Inventor score
Filing activity: Sep 30, 1983 → Sep 23, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6034882A | Vertically stacked field programmable nonvolatile memory and method of fabrication | Physics | 1,152 | Expired |
| US6420215B1 | Three-dimensional memory array and method of fabrication | Electricity | 824 | Expired |
| US6185122A | Vertically stacked field programmable nonvolatile memory and method of fabrication | Physics | 620 | Expired |
| US6351406B1 | Vertically stacked field programmable nonvolatile memory and method of fabrication | Physics | 355 | Expired |
| US6881994B2 | Monolithic three dimensional array of charge storage devices containing a planarized surface | Electricity | 349 | Expired |
| US5614855A | Delay-locked loop | Electricity | 340 | Expired |
| US6525953B1 | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication | Physics | 324 | Expired |
| US6888750B2 | Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication | Electricity | 318 | Expired |
| US6483736B2 | Vertically stacked field programmable nonvolatile memory and method of fabrication | Physics | 305 | Expired |
| US6125157A | Delay-locked loop circuitry for clock delay adjustment | Electricity | 250 | Expired |
| US6653712B2 | Three-dimensional memory array and method of fabrication | Electricity | 186 | Expired |
| US6539072B1 | Delay locked loop circuitry for clock delay adjustment | Electricity | 169 | Expired |
| US6631085B2 | Three-dimensional memory array incorporating serial chain diode stack | Physics | 168 | Expired |
| US7129538B2 | Dense arrays and charge storage devices | Electricity | 163 | Expired |
| US6515888B2 | Low cost three-dimensional memory array | Electricity | 156 | Expired |
| US5451898A | Bias circuit and differential amplifier having stabilized output swing | Electricity | 144 | Expired |
| US6643752B1 | Transceiver with latency alignment circuitry | Physics | 131 | Expired |
| US6385074B1 | Integrated circuit structure including three-dimensional memory array | Electricity | 123 | Expired |
| US5961215A | Temperature sensor integral with microprocessor and methods of using same | Physics | 113 | Expired |
| US5488321A | Static high speed comparator | Electricity | 112 | Expired |
| US6545891B1 | Modular memory device | Physics | 94 | Expired |
| US6591394B2 | Three-dimensional memory array and method for storing data bits and ECC bits therein | Electricity | 88 | Expired |
| US5101117A | Variable delay line phase-locked loop circuit synchronization system | Physics | 81 | Expired |
| US6525949B1 | Charge pump circuit | Electricity | 77 | Expired |
| US6689644B2 | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication | Physics | 76 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.