Process of removing residue material from a precision surface
US6890855B2 · kind B2 · utility
8Cited by
18References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2001 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Jul 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02057
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of removing residue from an etched precision surface. In this process the etched precision surface is contacted with a composition which includes liquid or supercritical carbon dioxide and a fluoride-generating species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.