Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer
US6891124B2 · kind B2 · utility
27Cited by
7References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 5, 2001 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Jul 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for using transmission spectroscopy to measure a temperature of a substrate (135). By passing light through a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the wafer. This in-situ method and system can be used as a feedback control in combination with a variable temperature substrate holder (182) to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites the variation of the temperature across the substrate (135) can also be measured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.