Fabrication of silicon-on-insulator structure using plasma immersion ion implantation

US6893907B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Dan Maydan · Los Altos Hills, US
• Randir P. S. Thakur · Boise, US
• Kenneth S. Collins · San Jose, US
• Amir Al-Bayati · San Jose, US
• Hiroji Hanawa · Sunnyvale, US
• Kartik Ramaswamy · San Jose, US
• Biagio Gallo · Los Gatos, US
• Andrew Nguyen · San Jose, US

Key dates

• Filing date: Feb 24, 2004
• Grant date: May 17, 2005
• Expiry date: Feb 24, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/977
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.