Patent · US Expired

Barrier layer for a copper metallization layer including a low-k dielectric

US6893956B2 · kind B2 · utility

12Cited by

15References

41Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Hartmut Ruelke · Dresden, DE
Joerg Hohage · Dresden, DE
Thomas Werner · Radebeul, DE
Massud Aminpur · Crolles, FR

Key dates

Filing date	Mar 31, 2003
Grant date	May 17, 2005
Priority date	—
Expiry date	Mar 31, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier/etch stop layer is provided with a significantly reduced nitrogen concentration at an interface in contact with said low-k dielectric material. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in said low-k dielectric layer is significantly suppressed, so that in a subsequent photolithographic step, interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.