Process for sidewall amplification of resist structures and for the production of structures having reduced structure size

US6893972B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jörg Rottstegge · Erlangen, DE
• Eberhard Kuhn · Hemhofen, DE
• Waltraud Herbst · Uttenreuth, DE
• Christian Eschbaumer · Arnstorf, DE
• Christoph Hohle · Bubenreuth, DE
• Gertrud Falk · Erlangen, DE
• Michael Sebald · Waischenfeld, DE

Key dates

• Filing date: Sep 3, 2002
• Grant date: May 17, 2005
• Expiry date: Mar 21, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.