High-voltage semiconductor component

US6894329B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gerald Deboy · Klagenfurt, AT
• Dirk Ahlers · Hersbruck, DE
• Helmut Strack · Hersbruck, DE
• Michael Rueb · Faak am See, AT
• Hans Weber · Villach, AT

Key dates

• Filing date: Jun 6, 2003
• Grant date: May 17, 2005
• Expiry date: Jun 6, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone.