Plural semiconductor devices in monolithic flip chip
US6894397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2002 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | Sep 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A flip chip structure contains laterally spaced semiconductor devices such as MOSFETs in a common chip. A deep trench isolates the devices. Contacts are connected to the source drain and gate electrode (or other electrodes) and are interconnected as required for a circuit function either within the chip or on the support board. Ball contacts are connected to the electrodes. The opposite surface of the chip to that in which the devices are formed receives a copper or other metal layer which is patterned to increase its area for heat exchange. The surface of the copper is coated with black oxide to increase its ability to radiate heat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.