Systems and methods for epitaxially depositing films on a semiconductor substrate
US6902622B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2002 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Apr 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68785
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.