Method for preparing a semiconductor wafer surface
US6903032B2 · kind B2 · utility
7Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2004 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Jan 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing a semiconductor wafer wherein rapid thermal annealing is conducted to smooth a free surface of a superficial zone that is supported by the wafer. The improvement includes treating the superficial zone before conducting the rapid thermal annealing to prevent pitting in the superficial zone during the rapid thermal annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.