Trench transistors and methods for fabricating trench transistors

US6903416B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Henninger · Birkenfeld, DE
• Franz Hirler · Isen, DE

Key dates

• Filing date: Sep 29, 2003
• Grant date: Jun 7, 2005
• Expiry date: Sep 29, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A trench transistor has a source zone introduced from a doped spacer into a body region and a channel running vertically along the insulation layer of the trench. A method is taught for fabricating the trench transistor of this type.