Methods of forming tungsten nucleation layer
US6905543B1 · kind B1 · utility
46Cited by
3References
34Claims
0Family size
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Key dates
| Filing date | Jun 19, 2002 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Jan 13, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45525
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The nucleation delay in the formation of a tungsten layer on a substrate is reduced or eliminated by alternative processes. In one process the substrate is exposed to atomic hydrogen before the tungsten nucleation layer is formed. In the other process the substrate is exposed to a boron hydride such as diborane (B2H6) before the nucleation layer is formed. The process works effectively to reduce or eliminate the tungsten nucleation delay on a variety of surfaces, including silicon, silicon dioxide, silicon nitride and titanium nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.