Method and apparatus for flexible atomic layer deposition
US6905547B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2002 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Sep 12, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45576
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus with a processing chamber subjects a substrate to atomic layer deposition and deposits a film layer. The processing chamber includes at least a first gas switching port. A gas switching manifold is coupled to the processing chamber and configured to mix reactants with a neutral carrier gas and provide gas switching functionality for ALD processes. An upstream gas source and pressure setting apparatus is coupled to the gas switching manifold. The upstream gas source and pressure setting apparatus includes at least a first reactant source, a second reactant source and a neutral gas source. Additionally, the upstream gas source and pressure setting apparatus is configured to provide a cascade of continuing, decreasing pressures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.