Diode structure for SOI circuits

US6905924B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Gert Burbach · Dresden, DE
• Manfred Horstmann · Dresden, DE
• Thomas Feudel · Radebeul, DE

Key dates

• Filing date: Jul 29, 2003
• Grant date: Jun 14, 2005
• Expiry date: Jul 29, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/00

Abstract

In an SOI diode structure, the conventional transistor-like MOS configuration is eliminated by replacing the polysilicon line by a completely dielectric region. This region may be used as an implantation mask to control a dopant gradient of a PN-junction that forms below the dielectric region. Moreover, during the salicide process, the dielectric region prevents the PN-junction from being shorted. Thus, a depletion of the active region caused by the MOS structure may be avoided. Therefore, the functioning of the PN-junction is maintained even for extremely thin semiconductor layers.