Drain side gate trench metal-oxide-semiconductor field effect transistor

US6906380B1 · kind B1 · utility

Assignee

• Vishay-Siliconix, LLC · US

Inventors

• Deva Pattanayak · Saratoga, US
• Jason Qi · Frisco, US
• Yuming Bai · Union City, US
• Kam Hong Lui · Santa Clara, US
• Ronald Wong · Campbell, US

Key dates

• Filing date: May 13, 2004
• Grant date: Jun 14, 2005
• Expiry date: May 13, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.