Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same
US6911351B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2003 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Apr 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.